Manufacturer Part Number
STB26NM60N
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
DPAK (TO-263) Packaging
MDmesh II Series
N-Channel MOSFET
600V Drain to Source Voltage
165mOhm Max On-Resistance @ 10A, 10V
20A Continuous Drain Current @ 25°C
1800pF Max Input Capacitance @ 50V
140W Max Power Dissipation
4V Max Gate-Source Threshold Voltage @ 250A
10V Drive Voltage (Max Rds On, Min Rds On)
60nC Max Gate Charge @ 10V
Surface Mount Mounting
Product Advantages
High-voltage operation
Low on-resistance
High current handling capability
Small package size
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 165mOhm @ 10A, 10V
Continuous Drain Current (Id): 20A @ 25°C
Input Capacitance (Ciss): 1800pF @ 50V
Power Dissipation (Ptot): 140W @ Tc
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement or upgrade parts available
Key Reasons to Choose
High-voltage operation up to 600V
Low on-resistance for efficient power conversion
High current handling capability up to 20A
Small DPAK (TO-263) package for compact designs
Compliance with RoHS3 regulations
Availability of replacement and upgrade options