Manufacturer Part Number
STB28N65M2
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel power MOSFET in DPak (TO-263) package
Product Features and Performance
650V drain-source voltage rating
20A continuous drain current at 25°C
180mΩ maximum on-resistance
1440pF maximum input capacitance
35nC maximum gate charge
170W maximum power dissipation
Product Advantages
High-voltage, high-power capability
Low on-resistance for high efficiency
Compact DPak surface-mount package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-source voltage (Vdss): 650V
Gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 180mΩ
Continuous drain current (Id): 20A
Input capacitance (Ciss): 1440pF
Power dissipation (Ptot): 170W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for high-frequency switching applications, such as power supplies, motor drives, and inverters
Application Areas
Power conversion and control
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
Currently available
No indication of impending discontinuation
Suitable replacements or upgrades may be available
Key Reasons to Choose This Product
High-voltage, high-power capability
Low on-resistance for high efficiency
Compact, surface-mount package
Suitable for high-frequency switching applications
Compliance with RoHS3 regulations
Manufactured to high quality standards