Manufacturer Part Number
STB25NM60N
Manufacturer
STMicroelectronics
Introduction
The STB25NM60N is a high-performance N-channel MOSFET transistor from STMicroelectronics, designed for power switching and control applications.
Product Features and Performance
600V Drain-Source Voltage (Vdss) rating
160mΩ maximum On-State Resistance (RDS(on)) at 10.5A, 10V
21A maximum Continuous Drain Current (ID) at 25°C
2400pF maximum Input Capacitance (Ciss) at 50V
160W maximum Power Dissipation at 25°C
Product Advantages
Excellent power handling capabilities
Low On-State Resistance for high efficiency
Fast switching performance
Robust and reliable design
Key Technical Parameters
N-Channel MOSFET Technology
600V Drain-Source Voltage (Vdss)
±25V Gate-Source Voltage (Vgs)
4V maximum Gate Threshold Voltage (Vgs(th)) at 250A
84nC maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Compatible with a wide range of power electronics and control systems
Application Areas
Switching power supplies
Motor drives
Inverters
Power converters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power handling and efficiency
Low On-State Resistance for reduced power losses
Fast switching performance for improved system response
Robust and reliable design for long-term operation
RoHS compliance for use in a wide range of applications