Manufacturer Part Number
STB24N60M2
Manufacturer
STMicroelectronics
Introduction
Power MOSFET with MDmesh II Plus technology
Product Features and Performance
High voltage (600V) capability
Low on-resistance (190mΩ @ 9A, 10V)
High continuous drain current (18A @ 25°C)
High power dissipation (150W @ Tc)
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Improved energy efficiency
Reliable high voltage operation
Compact and thermally efficient package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 190mΩ @ 9A, 10V
Continuous Drain Current (Id): 18A @ 25°C
Input Capacitance (Ciss): 1060pF @ 100V
Power Dissipation (Ptot): 150W @ Tc
Quality and Safety Features
ROHS3 compliant
Safe operating in high temperature environments
Compatibility
Suitable for use in a variety of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Welding equipment
Industrial electronics
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent high voltage and high current capability
Low on-resistance for improved energy efficiency
Compact and thermally efficient package
Reliable operation in wide temperature range
Suitable for a variety of power conversion and control applications