Manufacturer Part Number
STB23NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in D2PAK package
Product Features and Performance
600V drain-source voltage
19A continuous drain current at 25°C
Low on-resistance of 180 mOhm
Fast switching and low gate charge
Robust avalanche capability
Suitable for high-frequency switching applications
Product Advantages
Excellent power density and efficiency
Reliable and durable performance
Suitable for various power conversion and motor control applications
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 180 mOhm
Continuous drain current (Id): 19A at 25°C
Input capacitance (Ciss): 2050 pF
Power dissipation (Ptot): 150W
Quality and Safety Features
RoHS3 compliant
ESD protection
Overcurrent and overvoltage protection
Compatibility
Surface mount package (D2PAK)
Suitable for high-frequency switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from STMicroelectronics.
Key Reasons to Choose This Product
Excellent power density and efficiency for high-performance power conversion and motor control
Reliable and durable performance with robust protection features
Suitable for a wide range of industrial and consumer electronics applications
Established reputation and technical support from STMicroelectronics
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