Manufacturer Part Number
STB22N60DM6
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET in DPAK (TO-263) package
Product Features and Performance
600V drain-source voltage rating
Low on-resistance (240mΩ @ 7.5A, 10V)
High current capability (15A continuous drain current at 25°C)
Low input capacitance (800pF @ 100V)
Wide operating temperature range (-55°C to 150°C)
Suitable for high-frequency, high-efficiency, high-power applications
Product Advantages
Excellent figure of merit (RDS(on) x Qg)
Optimized for hard-switching applications
Robust avalanche capability
Fast switching speed
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (RDS(on)): 240mΩ @ 7.5A, 10V
Drain Current (ID): 15A (Tc)
Input Capacitance (Ciss): 800pF @ 100V
Power Dissipation (Ptot): 130W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power supply and driver circuit designs
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial control
Home appliances
Product Lifecycle
This product is currently in production and widely available.
No immediate plans for discontinuation.
Upgrades and replacements may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent figure of merit (RDS(on) x Qg) for high-efficiency, high-frequency operation
Robust avalanche capability for reliable performance in harsh environments
Wide operating temperature range and high power dissipation capability
Compatibility with a variety of power supply and driver circuit designs
Proven reliability and long-term availability from a reputable manufacturer