STB21NM60ND - STMicroelectronics

Manufacturer Part Number

STB21NM60ND

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel power MOSFET transistor with FDmesh II technology

Product Features and Performance

600V breakdown voltage

Extremely low on-resistance of 220mOhm

High current capability of 17A at 25°C

Low gate charge of 60nC

Wide operating temperature range up to 150°C

Product Advantages

Improved efficiency and power density

Enhanced reliability and robustness

Optimized for high-frequency and high-power applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±25V

Continuous Drain Current (Id): 17A at 25°C

On-Resistance (Rds(on)): 220mOhm at 8.5A, 10V

Input Capacitance (Ciss): 1800pF at 50V

Power Dissipation (Ptot): 140W at 25°C

Quality and Safety Features

RoHS3 compliant

Withstands high temperatures up to 150°C

Compatibility

Compatible with a wide range of power electronics applications

Application Areas

Switch-mode power supplies

Motor drives

Uninterruptible power supplies (UPS)

Renewable energy systems

Welding equipment

Product Lifecycle

Currently in production, no plans for discontinuation

Replacements and upgrades available as technology advances

Key Reasons to Choose

Exceptional performance and efficiency

Robust and reliable design

Optimized for high-frequency, high-power applications

Suitable for a wide range of power electronics uses