Manufacturer Part Number
STB21N90K5
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel MOSFET transistor
Designed for power conversion and motor control applications
Product Features and Performance
Very low on-state resistance (RDS(on))
High drain-to-source voltage rating (900V)
Fast switching performance
Robust and reliable design
Optimized for high efficiency, high power density power conversion
Product Advantages
Excellent power conversion efficiency
Reduced system size and weight
Improved system reliability
Key Technical Parameters
Drain-to-Source Voltage (VDS): 900V
Gate-to-Source Voltage (VGS): ±30V
On-State Resistance (RDS(on)): 299mΩ @ 9A, 10V
Continuous Drain Current (ID): 18.5A @ 25°C (Tc)
Input Capacitance (Ciss): 1645pF @ 100V
Power Dissipation (Pd): 250W @ 25°C (Tc)
Quality and Safety Features
Compliant with RoHS Directive 2011/65/EU (RoHS3)
Qualified to industry quality standards
Compatibility
Suitable for a wide range of power conversion and motor control applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Welding equipment
Industrial automation and control systems
Product Lifecycle
Currently in active production
No plans for discontinuation, replacements or upgrades identified
Key Reasons to Choose This Product
Excellent power efficiency and power density
Robust and reliable design for long-term operation
Highly suitable for high-voltage power conversion applications
Compliance with key industry quality and safety standards