STB20NM60D - STMicroelectronics

Manufacturer Part Number

STB20NM60D

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel MOSFET with low on-resistance.

Product Features and Performance

600V drain-source voltage

Low on-resistance (290mΩ @ 10A, 10V)

High current capability (20A continuous drain current)

Low gate charge (52nC @ 10V)

Wide operating temperature range (-65°C to 150°C)

Surface mount package (D2PAK)

Product Advantages

Excellent performance for high-power switching applications

High efficiency and low power loss

Robust design for reliable operation

Compact and easy to integrate

Key Technical Parameters

Drain-Source Voltage (Vdss): 600V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 290mΩ @ 10A, 10V

Drain Current (Id): 20A continuous

Input Capacitance (Ciss): 1300pF @ 25V

Power Dissipation (Ptot): 192W

Quality and Safety Features

RoHS3 compliant

D2PAK package for improved thermal performance and reliability

Compatibility

Suitable for a wide range of power electronics applications, including:

Switch-mode power supplies

Motor drives

Inverters

Industrial and consumer electronics

Application Areas

High-power switching

Power conversion

Industrial and consumer electronics

Product Lifecycle

This product is currently available and actively supported by the manufacturer. No discontinuation or end-of-life announcements have been made.

Key Reasons to Choose This Product

Excellent performance with low on-resistance and high current capability

Robust and reliable design for demanding applications

Compact and easy-to-integrate surface mount package

Wide operating temperature range for versatile use

RoHS3 compliance for environmental sustainability