Manufacturer Part Number
STB20NM60T4
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET
Product Features and Performance
High voltage rating up to 600V
Low on-resistance of 290 mOhm
High current capability up to 20A
Low gate charge of 54 nC
Wide operating temperature range up to 150°C
Product Advantages
Optimized for high-voltage, high-power applications
Excellent efficiency and thermal management
Compact and reliable D2PAK package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 290 mOhm
Continuous Drain Current (ID): 20A
Input Capacitance (Ciss): 1500 pF
Power Dissipation (Pd): 192W
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Compatible with a wide range of high-voltage, high-power circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation
Several Key Reasons to Choose This Product
High voltage and current capabilities
Excellent efficiency and thermal performance
Compact and reliable packaging
Suitable for safety-critical applications
Proven reliability and long-term availability