Manufacturer Part Number
STB21NK50Z
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
Automotive, AEC-Q101, SuperMESH series
N-Channel MOSFET
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Current Continuous Drain (Id) @ 25°C: 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Product Advantages
Automotive-grade performance
High voltage capability
Low on-resistance
High current handling
Key Technical Parameters
Drain to Source Voltage (Vdss): 500 V
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Current Continuous Drain (Id) @ 25°C: 17A (Tc)
Power Dissipation (Max): 190W (Tc)
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 qualified
Compatibility
Surface Mount
D2PAK package
Application Areas
Automotive electronics
Power supplies
Motor drives
Industrial automation
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Automotive-grade reliability and performance
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Compact D2PAK surface mount package