Manufacturer Part Number
STB20NM50T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel power MOSFET with MDmesh technology for high-voltage, high-current applications.
Product Features and Performance
High breakdown voltage (550V)
Low on-resistance (250mΩ)
High current capability (20A)
Fast switching speed
Wide operating temperature range (-65°C to 150°C)
Low gate charge (56nC)
Compact D2PAK package
Product Advantages
Excellent efficiency and thermal performance
Reliable and robust design
Suitable for high-voltage, high-current applications
Compact and easy to integrate
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 550V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 250mΩ @ 10A, 10V
Continuous Drain Current (Id): 20A @ 25°C
Input Capacitance (Ciss): 1480pF @ 25V
Power Dissipation (Tc): 192W
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Suitable for high-voltage, high-current applications
Compatibility
Suitable for use in a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Renewable energy systems
Automotive electronics
Product Lifecycle
This product is an active and widely available part from STMicroelectronics.
Replacement and upgrade options are available.
Key Reasons to Choose This Product
Excellent performance and efficiency
Reliable and robust design
Compact and easy to integrate
Suitable for a wide range of high-voltage, high-current applications
Readily available and supported by a leading semiconductor manufacturer