Manufacturer Part Number
STB20N95K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-power N-channel MOSFET for industrial and automotive applications
Product Features and Performance
Drain-to-source voltage up to 950 V
Continuous drain current up to 17.5 A at 25°C
Low on-resistance of 330 mΩ at 10 V gate-to-source voltage
High power dissipation of 250 W at 25°C
Wide operating temperature range of -55°C to 150°C
Robust and reliable design for high-voltage and high-power applications
Product Advantages
Excellent efficiency and power density
High reliability and long lifespan
Suitable for industrial and automotive applications
Easy to integrate and design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 950 V
Gate-to-Source Voltage (Vgs): ±30 V
On-Resistance (Rds(on)): 330 mΩ @ 9 A, 10 V
Continuous Drain Current (Id): 17.5 A @ 25°C
Input Capacitance (Ciss): 1500 pF @ 100 V
Power Dissipation (Ptot): 250 W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage and high-power applications
Robust and reliable design
Compatibility
Compatible with a wide range of industrial and automotive applications
Application Areas
Industrial power supplies
Motor drives
Welding equipment
Induction heating
Automotive applications (e.g., power conversion, motor control)
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High-voltage and high-power capabilities
Excellent efficiency and power density
Robust and reliable design for industrial and automotive applications
Easy to integrate and design
Wide operating temperature range
RoHS3 compliance for environmental safety