Manufacturer Part Number
STB200NF03T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor
Part of the STripFET III series
Product Features and Performance
Optimized for high-power, high-efficiency applications
Low on-resistance (3.6 mΩ) for low conduction losses
High current handling capability (120 A continuous drain current)
Wide operating temperature range (-55°C to 175°C)
Fast switching speed and low gate charge (140 nC)
Product Advantages
Excellent power efficiency due to low on-resistance
Robust and reliable performance across wide temperature range
Compact D2PAK surface mount package for high-density designs
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 120 A
On-Resistance (Rds(on)): 3.6 mΩ
Input Capacitance (Ciss): 4950 pF
Power Dissipation (Tc): 300 W
Quality and Safety Features
RoHS3 compliant
Adheres to high-reliability quality standards
Compatibility
Suitable for a wide range of high-power, high-efficiency applications
Application Areas
Power supplies
Motor drives
Switchmode power converters
Industrial and automotive electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power efficiency and low conduction losses
Robust and reliable performance across wide temperature range
Compact surface mount package for high-density designs
Optimized for high-power, high-efficiency applications
Adheres to high-quality and safety standards