Manufacturer Part Number
STB18NM80
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel power MOSFET
Product Features and Performance
Designed for high-voltage, high-power applications
Low on-resistance for high efficiency
Low gate charge for fast switching
Robust avalanche capability
Product Advantages
Excellent efficiency and thermal performance
Reliable and durable construction
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±25 V
Rds On (Max) @ Id, Vgs: 295 mOhm @ 8.5 A, 10 V
Current Continuous Drain (Id) @ 25°C: 17 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V
Power Dissipation (Max): 190 W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and robust package design (DPAK/TO-263)
Compatibility
Surface mount package (DPAK/TO-263)
Application Areas
High-voltage, high-power applications such as power supplies, motor drives, and power conversion systems
Product Lifecycle
This product is actively supported and available for purchase.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Reliable and durable construction
Suitable for high-voltage, high-power applications
RoHS3 compliance for environmental responsibility
Robust and compatible package design
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