Manufacturer Part Number
STB18N60DM2
Manufacturer
STMicroelectronics
Introduction
High performance N-Channel power MOSFET with low on-resistance
Product Features and Performance
Operates up to 150°C junction temperature
Low on-resistance of 295 mΩ @ 6A, 10V
High continuous drain current of 12A @ 25°C
Fast switching with low gate charge of 20 nC @ 10V
Wide operating voltage range up to 600V
Product Advantages
Excellent thermal performance
High power density
Fast switching capability
Robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 295 mΩ @ 6A, 10V
Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 800 pF @ 100V
Power Dissipation (Tc): 90W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for various power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
Home appliances
Industrial equipment
Product Lifecycle
Current production model
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent thermal performance and power density
Fast switching capability for high efficiency
Robust and reliable design
Suitable for a wide range of power conversion applications
STB170NF04 MOSSTMicroelectronics