Manufacturer Part Number
STB18NF30
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET transistor suitable for automotive and industrial applications.
Product Features and Performance
330V drain-to-source voltage
18A continuous drain current at 25°C case temperature
Low on-resistance of 180mΩ at 9A, 10V
Wide operating temperature range of -55°C to 175°C
High input capacitance of 1650pF at 25V
Maximum power dissipation of 150W at 25°C case temperature
Product Advantages
Robust and reliable design for automotive and industrial use
Excellent thermal characteristics for efficient power handling
Optimized for high-frequency and high-power switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 330V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 180mΩ @ 9A, 10V
Continuous drain current (Id): 18A at 25°C
Input capacitance (Ciss): 1650pF @ 25V
Power dissipation (Pd): 150W at 25°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Packaged in DPAK (TO-263) surface mount format
Compatible with various automotive and industrial control systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Automotive electronics
Industrial automation and control
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Robust and reliable performance for demanding applications
Excellent thermal management capabilities for high-power operation
Optimized for high-frequency switching with low on-resistance
Automotive and industrial-grade quality and safety features
Wide availability and compatibility with various systems
STB18N60M2STMicroelectronicsMOSFET N-CH 600V 13A D2PAK
STB19NB20 MOSSTMicroelectronics
STB190NF04SR