Manufacturer Part Number
STB18NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
High breakdown voltage of 600V
Low on-resistance of 290mΩ
High continuous drain current of 13A
Fast switching speed
Low input capacitance of 1030pF
Wide operating temperature range up to 150°C
Product Advantages
Excellent power efficiency
Reliable and robust design
Suitable for high-voltage applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 290mΩ
Drain Current (Id): 13A
Input Capacitance (Ciss): 1030pF
Power Dissipation (Ptot): 110W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature environments
Compatibility
Surface mount package (DPAK/TO-263)
Compatible with various power electronics applications
Application Areas
Switching power supplies
Motor drives
Industrial electronics
Consumer electronics
Product Lifecycle
Currently available
No discontinuation or replacement announced
Key Reasons to Choose This Product
High power efficiency and reliability
Exceptional performance characteristics
Suitable for high-voltage, high-current applications
Robust design and wide operating temperature range
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