STB18N65M5 - STMicroelectronics

Manufacturer Part Number

STB18N65M5

Manufacturer

STMicroelectronics

Introduction

High voltage, high performance N-channel power MOSFET

Product Features and Performance

650V drain-to-source voltage rating

Low on-resistance of 220mΩ

High current capability up to 15A

Fast switching performance

Low gate charge and input capacitance

Suitable for high frequency switching applications

Product Advantages

Robust design for high voltage, high power applications

Optimized for high efficiency power conversion

Reduced power loss and improved system efficiency

Compact DPAK (TO-263) package for space-saving designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 650V

Maximum Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 220mΩ @ 7.5A, 10V

Continuous Drain Current (Id): 15A @ 25°C

Input Capacitance (Ciss): 1240pF @ 100V

Power Dissipation (Tc): 110W

Quality and Safety Features

RoHS3 compliant

Reinforced isolation for high voltage operation

Robust design for reliable performance

Compatibility

Suitable for a wide range of high voltage, high power switching applications

Application Areas

Switch-mode power supplies (SMPS)

Motor drives

Inverters

Uninterruptible power supplies (UPS)

Industrial automation and control

Product Lifecycle

This product is still in active production and not nearing discontinuation

Replacement/upgrade options available for future needs

Key Reasons to Choose This Product

Excellent power handling capability and high voltage rating

Optimized for high efficiency power conversion

Robust and reliable design for demanding applications

Compact DPAK package for space-saving designs

Broad compatibility and suitability for various high power applications