Manufacturer Part Number
STB170NF04
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in DPAK package
Product Features and Performance
High current handling capability up to 80A
Low on-resistance of 5 mOhm
Wide operating temperature range of -55°C to 175°C
High power dissipation of 300W
Fast switching performance with low gate charge of 170 nC
Product Advantages
Excellent power efficiency and thermal performance
Robust design for reliable operation
Suitable for high-power switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 80A (at 25°C)
Input Capacitance (Ciss): 9000 pF (at 25V)
Threshold Voltage (Vgs(th)): 4V (at 250A)
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for efficient heat dissipation
Compatibility
Surface mount package compatible with standard assembly processes
Application Areas
High-power switching circuits
Motor drives
Power supplies
Industrial and automotive electronics
Product Lifecycle
Current product, no known plans for discontinuation
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
Excellent current handling and low on-resistance for high-efficiency power conversion
Wide operating temperature range and high power dissipation enable robust design
Fast switching performance supports high-frequency power conversion
Proven reliability and quality from a leading semiconductor manufacturer
STB16NK60ZSTMicroelectronics