Manufacturer Part Number
STB16NF06LT4
Manufacturer
STMicroelectronics
Introduction
This is a discrete semiconductor product, specifically a single N-channel MOSFET.
Product Features and Performance
Operates in the temperature range of -55°C to 175°C (TJ)
Drain-to-source voltage (Vdss) of 60V
Gate-to-source voltage (Vgs) range of ±16V
On-resistance (Rds(on)) of 90mΩ at 8A and 10V
Continuous drain current (Id) of 16A at 25°C (Tc)
Input capacitance (Ciss) of 345pF at 25V
Maximum power dissipation of 45W at 25°C (Tc)
Gate charge (Qg) of 10nC at 4.5V
Product Advantages
High-performance MOSFET for power applications
Compact D2PAK surface mount package
Suitable for harsh temperature environments
Key Technical Parameters
MOSFET technology
N-channel FET type
Threshold voltage (Vgs(th)) of 1V at 250A (min)
Drive voltage range of 5V to 10V
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with various power electronic circuits and systems
Application Areas
Suitable for use in power conversion, motor control, and other power electronics applications
Product Lifecycle
Currently available, no information on discontinuation or replacements
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and high current handling
Robust design for operation in wide temperature ranges
Compact surface mount package for efficient board space utilization
RoHS3 compliance for environmental sustainability
STB16NK60ZSTMicroelectronics