Manufacturer Part Number
STB17N80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET
Product Features and Performance
Drain-to-source voltage up to 800V
Low on-resistance down to 340mΩ
High continuous drain current up to 14A
Fast switching capabilities
Low gate charge
Product Advantages
Excellent power conversion efficiency
Reliable high-voltage operation
Compact DPAK (TO-263) surface mount package
Suitable for high-power, high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vds): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 340mΩ @ 7A, 10V
Drain Current (Id): 14A (Tc)
Input Capacitance (Ciss): 866pF @ 100V
Power Dissipation (Pd): 170W (Tc)
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Suitable for high-power, high-frequency switching applications in power supplies, motor drives, and industrial electronics
Application Areas
Power supplies
Motor drives
Industrial electronics
Switching power converters
Product Lifecycle
Current product, no indication of discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent high-voltage performance and reliability
Low on-resistance for high efficiency
Fast switching capabilities for high-frequency operation
Compact and reliable DPAK (TO-263) surface mount package
Suitable for a wide range of high-power, high-frequency applications
STB170NF04 MOSSTMicroelectronics