Manufacturer Part Number
STB18N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in D2PAK package
Product Features and Performance
600V drain-to-source voltage
Low on-resistance of 280mOhm
Continuous drain current of 13A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 791pF
Power dissipation up to 110W
Product Advantages
Excellent power handling capability
High efficiency and reliability
Suitable for high-voltage, high-current applications
D2PAK package provides good thermal performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 280mOhm
Continuous Drain Current (Id): 13A
Input Capacitance (Ciss): 791pF
Power Dissipation (Ptot): 110W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-voltage, high-current power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and high-quality performance
Suitable for a wide range of high-voltage, high-current applications
D2PAK package provides good thermal management
RoHS3 compliance for environmental responsibility
STB18N60M6STMicroelectronics
STB190NF04SR