STB18N60M2 - STMicroelectronics

Manufacturer Part Number

STB18N60M2

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel power MOSFET in D2PAK package

Product Features and Performance

600V drain-to-source voltage

Low on-resistance of 280mOhm

Continuous drain current of 13A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 791pF

Power dissipation up to 110W

Product Advantages

Excellent power handling capability

High efficiency and reliability

Suitable for high-voltage, high-current applications

D2PAK package provides good thermal performance

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 280mOhm

Continuous Drain Current (Id): 13A

Input Capacitance (Ciss): 791pF

Power Dissipation (Ptot): 110W

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of high-voltage, high-current power electronics applications

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

Current product, no discontinuation plans

Replacements and upgrades available as needed

Key Reasons to Choose This Product

Excellent power handling and efficiency

Reliable and high-quality performance

Suitable for a wide range of high-voltage, high-current applications

D2PAK package provides good thermal management

RoHS3 compliance for environmental responsibility