Manufacturer Part Number
STB20N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Part of the MDmesh V series
Product Features and Performance
Drain to Source Voltage (Vdss) of 650V
Maximum Drain Current (Id) of 18A at 25°C
On-Resistance (Rds(on)) of 190mΩ at 9A, 10V
Input Capacitance (Ciss) of 1434pF at 100V
Power Dissipation (Pd) of 130W at Tc
Operating Temperature range of -55°C to 150°C
Product Advantages
High Voltage and High Current Capability
Low On-Resistance for Improved Efficiency
Compact DPAK (TO-263) Surface Mount Package
Compliant with RoHS3 Directive
Key Technical Parameters
N-Channel MOSFET
Vgs(th) Max of 5V at 250μA
Drive Voltage Range of 10V
Gate Charge (Qg) Max of 36nC at 10V
Quality and Safety Features
ROHS3 Compliant
ESD Protection
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switched Mode Power Supplies (SMPS)
Motor Drives
Inverters
Industrial Controls
Telecommunications Equipment
Product Lifecycle
Current production, no plans for discontinuation
Replacements and upgrades available as needed
Several Key Reasons to Choose This Product
Excellent performance characteristics for high voltage, high current applications
Compact surface mount package for space-constrained designs
Proven reliability and safety features
Wide operating temperature range and RoHS compliance