Manufacturer Part Number
STB200NF04T4
Manufacturer
STMicroelectronics
Introduction
High-performance, N-channel power MOSFET in a D2PAK package
Product Features and Performance
High power density
Low on-resistance
Low gate charge
High avalanche energy capability
Wide operating temperature range (-55°C to 175°C)
Suitable for high-frequency switching applications
Product Advantages
Excellent thermal performance
Robust design
High efficiency
Reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.7mΩ @ 90A, 10V
Continuous Drain Current (Id): 120A @ 25°C
Input Capacitance (Ciss): 5100pF @ 25V
Power Dissipation (Tc): 310W
Quality and Safety Features
RoHS3 compliant
D2PAK package for reliable high-power operation
Tested for high avalanche energy capability
Compatibility
Suitable for a wide range of high-frequency switching applications, including:
Power supplies
Motor drives
Inverters
Converters
Application Areas
Industrial equipment
Consumer electronics
Automotive applications
Product Lifecycle
This product is currently in production and available. No discontinuation or end-of-life plans have been announced.
Key Reasons to Choose This Product
Exceptional power density and efficiency
Reliable and robust design
Wide operating temperature range
Suitable for high-frequency switching applications
RoHS3 compliance for environmental responsibility