Manufacturer Part Number
STB21N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel power MOSFET for switching applications
Product Features and Performance
High voltage rating up to 650V
Low on-resistance of 190mΩ
Continuous drain current up to 17A
High power dissipation of 125W
Fast switching and low gate charge
Product Advantages
Efficient power conversion
Reliable and robust performance
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Maximum Gate-Source Voltage (Vgs): ±25V
On-resistance (Rds(on)): 190mΩ @ 8.5A, 10V
Continuous Drain Current (Id): 17A
Input Capacitance (Ciss): 1950pF @ 100V
Power Dissipation (Tc): 125W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
TO-263-3, D2PAK package
Suitable for surface mount applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation
Appliances
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose
Excellent power handling capability
Efficient and reliable performance
Suitable for high-voltage, high-current applications
Compact and easy-to-use surface mount package