Manufacturer Part Number
STB23NM50N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor with high voltage and current handling capabilities.
Product Features and Performance
500V drain-to-source voltage rating
17A continuous drain current at 25°C
Low on-resistance of 190mΩ at 8.5A, 10V
Fast switching speed with low gate charge of 45nC at 10V
Wide operating temperature range up to 150°C
Product Advantages
Excellent power handling and efficiency
Reliable performance in high-voltage applications
Compact DPAK (TO-263) surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Maximum Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 190mΩ @ 8.5A, 10V
Continuous Drain Current (Id): 17A @ 25°C
Input Capacitance (Ciss): 1330pF @ 50V
Power Dissipation (Tc): 125W
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package with robust construction
Compatibility
Suitable for use in a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is an active, in-production part from STMicroelectronics.
Replacements and upgrades may be available as technology advances.
Key Reasons to Choose this Product
Excellent power handling and efficiency for high-voltage applications
Reliable performance over a wide temperature range
Compact surface-mount package for space-constrained designs
RoHS compliance for environmentally-conscious applications