STB24NM65N - STMicroelectronics

Manufacturer Part Number

STB24NM65N

Manufacturer

STMicroelectronics

Introduction

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) device

Part of the STMicroelectronics MDmesh II series

Product Features and Performance

N-channel MOSFET

Drain to Source Voltage (Vdss) of 650V

Maximum Gate-to-Source Voltage (Vgs) of ±25V

On-state Resistance (Rds(on)) of 190mOhm @ 9.5A, 10V

Continuous Drain Current (Id) of 19A at 25°C

Input Capacitance (Ciss) of 2500pF @ 50V

Power Dissipation (Pc) of 160W at 25°C

Operating Temperature Range up to 150°C

Product Advantages

High voltage capability

Low on-state resistance

High current handling

Suitable for high-power and high-efficiency applications

Key Technical Parameters

Transistor Type: N-Channel MOSFET

Drain to Source Voltage (Vdss): 650V

Gate to Source Voltage (Vgs): ±25V

On-state Resistance (Rds(on)): 190mOhm @ 9.5A, 10V

Continuous Drain Current (Id): 19A at 25°C

Input Capacitance (Ciss): 2500pF @ 50V

Power Dissipation (Pc): 160W at 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount assembly

Compatibility

Industry-standard D2PAK (TO-263-3) package

Suitable for a wide range of power electronics applications

Application Areas

Switching power supplies

Motor drives

Industrial automation

Renewable energy systems

Home appliances

Product Lifecycle

Current product, no indication of discontinuation

Replacement and upgrade options available from STMicroelectronics

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-state resistance for improved efficiency

Compact surface mount package for space-constrained designs

Proven reliability and performance in various power electronics applications

Supported by a leading semiconductor manufacturer, STMicroelectronics