STB24NM60N - STMicroelectronics

Manufacturer Part Number

STB24NM60N

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel MOSFET transistor

Part of the MDmesh II series

Product Features and Performance

600V drain-to-source voltage rating

Low on-resistance (190mΩ max @ 8A, 10V)

High current capability (17A continuous @ 25°C)

Low gate charge (46nC max @ 10V)

Wide operating temperature range (-55°C to 150°C)

Surface mount DPAK (TO-263) package

Product Advantages

Excellent power efficiency

High reliability

Compact and space-saving design

Suitable for high-voltage, high-power applications

Key Technical Parameters

Vdss: 600V

Vgs(max): ±30V

Rds(on)(max): 190mΩ @ 8A, 10V

Id(continuous): 17A @ 25°C

Ciss(max): 1400pF @ 50V

Pd(max): 125W

Quality and Safety Features

RoHS3 compliant

Suitable for safety-critical applications

Compatibility

Compatible with a wide range of high-voltage, high-power electronic systems

Application Areas

Switch-mode power supplies

Motor drives

Inductive lighting ballasts

Industrial and home appliances

Telecom and industrial power conversion

Product Lifecycle

This product is currently in production and actively supported by the manufacturer.

Replacement or upgrade options are available if needed.

Key Reasons to Choose This Product

Excellent power efficiency and performance

Reliable and robust design

Compact and space-saving package

Suitable for a wide range of high-voltage, high-power applications

Long-term availability and support from the manufacturer