Manufacturer Part Number
STB23NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
Optimized for high-efficiency power conversion applications
Low on-resistance for low conduction losses
Fast switching speed for high-frequency operation
High drain-source breakdown voltage for robust operation
Product Advantages
Superior energy efficiency
Reliable and durable performance
Compact and space-saving design
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 180mΩ @ 10A, 10V
Continuous drain current (Id): 19.5A @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Surface mount (D2PAK) package
Compatible with various power conversion applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent efficiency and performance
Reliable and long-lasting operation
Compact and flexible design
Suitable for a wide range of power conversion applications