Manufacturer Part Number
STB25NM50N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel enhancement-mode power MOSFET
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 500V
Extremely low on-resistance (RDS(on)) of 140mΩ at 11A, 10V
Continuous Drain Current (ID) of 22A at 25°C
Power Dissipation (Ptot) of 160W at 25°C
Fast switching speed
Low input capacitance (Ciss) of 2565pF at 25V
Product Advantages
Excellent power efficiency
High power density
Reliable and rugged design
Suitable for high-voltage, high-power applications
Key Technical Parameters
MOSFET Technology: MDmesh II
Package: D2PAK (TO-263-3)
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Halogen-free
Compatibility
Compatible with a wide range of high-voltage, high-power applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current production part, no indication of discontinuation
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Robust and reliable design
Suitable for high-voltage, high-power applications
Broad operating temperature range
RoHS3 compliant and halogen-free