Manufacturer Part Number
IXFN48N50Q
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with low on-resistance and high power density, suitable for various power conversion and control applications.
Product Features and Performance
High voltage rating of 500V drain-source voltage
Very low on-resistance of 100mΩ at 500mA and 10V gate-source voltage
High continuous drain current of 48A at 25°C case temperature
Wide operating temperature range from -55°C to 150°C
Low input capacitance of 7000pF at 25V drain-source voltage
High power dissipation capability of 500W at 25°C case temperature
Product Advantages
Excellent power density and efficiency for power conversion and control applications
Robust design with high voltage and temperature ratings
Low on-resistance and input capacitance for improved system performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 100mΩ @ 500mA, 10V
Continuous Drain Current (Id): 48A @ 25°C
Input Capacitance (Ciss): 7000pF @ 25V
Power Dissipation (Pd): 500W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial control systems
Automotive electronics
Product Lifecycle
This product is currently in production and actively supported by the manufacturer.
Replacement or upgrade options may be available, but the manufacturer should be consulted for the latest information.
Key Reasons to Choose This Product
Excellent power density and efficiency for improved system performance
Robust design with high voltage and temperature ratings for reliable operation
Low on-resistance and input capacitance for reduced power losses and faster switching
Compatibility with a wide range of power conversion and control applications
Manufactured to high quality standards with RoHS3 compliance
