Manufacturer Part Number
IXFN50N120SIC
Manufacturer
IXYS Corporation
Introduction
High-performance silicon carbide (SiC) field-effect transistor (FET) with superior efficiency and power density.
Product Features and Performance
Extremely low on-resistance and high switching speed for efficient power conversion
Capable of handling high voltage up to 1200V
Low input capacitance for fast switching
Designed for high-frequency, high-power applications
Product Advantages
Significant reduction in conduction and switching losses compared to silicon-based devices
Enables more compact and efficient power conversion systems
Excellent thermal performance and reliability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1200V
Continuous Drain Current (Id) @ 25°C: 47A
On-State Resistance (Rds(on)) @ 40A, 20V: 50mΩ
Input Capacitance (Ciss) @ 1000V: 1900pF
Gate Charge (Qg) @ 20V: 100nC
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-power, high-frequency applications such as:
Power inverters
Switch-mode power supplies
Motor drives
Renewable energy systems
Application Areas
Industrial
Automotive
Aerospace and defense
Renewable energy
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Exceptional efficiency and power density
Ability to handle high voltages and currents
Fast switching and low losses
Compact and reliable design
Compatibility with a wide range of high-power applications
