Manufacturer Part Number
IXFN48N55
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor
Designed for power switching applications
Product Features and Performance
N-channel MOSFET
High drain-source voltage of 550V
Continuous drain current of 48A at 25°C
Low on-resistance of 110mΩ at 500mA, 10V
Wide operating temperature range of -55°C to 150°C
High power dissipation of 600W
Product Advantages
Excellent power switching capabilities
High reliability and ruggedness
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 550V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 110mΩ
Input Capacitance (Ciss): 8900pF
Gate Charge (Qg): 330nC
Quality and Safety Features
Robust SOT-227B package
Designed for high-reliability operation
Complies with relevant safety standards
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial control systems
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose
Excellent power handling and switching performance
High reliability and long operating life
Suitable for demanding high-voltage, high-current applications
Comprehensive technical specifications and quality assurance