Manufacturer Part Number
IXFN48N50
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
Voltage Rating: 500V Drain-Source Voltage (Vdss)
Maximum Voltage: ±20V Gate-Source Voltage (Vgs)
On-State Resistance: 100mOhm @ 500mA, 10V (Rds(on))
Continuous Drain Current: 48A @ 25°C (Id)
Input Capacitance: 8400pF @ 25V (Ciss)
Power Dissipation: 520W @ Tc
Product Advantages
High voltage and current handling capability
Low on-state resistance for efficiency
Wide operating temperature range (-55°C to 150°C)
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Threshold Voltage: 4V @ 8mA (Vgs(th))
Gate Charge: 270nC @ 10V (Qg)
Mounting Type: Chassis Mount
Quality and Safety Features
RoHS3 Compliant
Housed in SOT-227B package
Compatibility
Compatible with a variety of power electronics applications
Application Areas
Suitable for high-power switching applications
Can be used in motor drives, power supplies, and other power conversion systems
Product Lifecycle
Current production part, no plans for discontinuation
Replacement and upgrade options available if needed
Key Reasons to Choose This Product
Excellent voltage and current handling capability
Low on-state resistance for improved efficiency
Wide operating temperature range for versatile use
Reliable performance in high-power applications
RoHS compliance for environmentally-friendly design