Manufacturer Part Number
IXFN44N100Q3
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor for power electronics applications
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain to source voltage of 1000V
Low on-resistance of 220mΩ at 22A, 10V
High continuous drain current of 38A at 25°C case temperature
High input capacitance of 13,600pF at 25V
High power dissipation of 960W at case temperature
Product Advantages
Excellent performance for high-voltage, high-current power applications
Robust design for reliable operation
Compact SOT-227B package for efficient thermal management
Key Technical Parameters
N-Channel MOSFET transistor
Drain to Source Voltage (Vdss): 1000V
Gate to Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 220mΩ @ 22A, 10V
Continuous Drain Current (Id): 38A @ 25°C
Input Capacitance (Ciss): 13,600pF @ 25V
Power Dissipation: 960W @ case temperature
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments and high-stress applications
Compatibility
Chassis mount SOT-227B package
Application Areas
Power electronics
Industrial motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Switch-mode power supplies
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance in high-voltage, high-current power applications
Robust and reliable design for demanding environments
Efficient thermal management in compact SOT-227B package
Wide operating temperature range for versatile use
RoHS3 compliance for environmental sustainability
