Manufacturer Part Number
IXFN44N60
Manufacturer
IXYS Corporation
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
High current-carrying capability up to 44A (at 25°C)
Low on-resistance of 130mOhm (at 500mA, 10V)
Wide operating temperature range of -55°C to 150°C
High drain-source voltage rating of 600V
Low gate-source voltage range of ±20V
Low input capacitance of 8900pF (at 25V)
High power dissipation capability of 600W (at TC)
Product Advantages
Excellent efficiency and thermal performance
Robust and reliable design
Suitable for high-power, high-voltage applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 130mOhm (at 500mA, 10V)
Continuous Drain Current (Id): 44A (at 25°C)
Input Capacitance (Ciss): 8900pF (at 25V)
Power Dissipation (Tc): 600W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Robust, high-reliability design
Compatibility
Chassis mount package (SOT-227B)
Application Areas
High-power, high-voltage switching applications
Industrial motor controls
Power supplies
Inverters
Welding equipment
UPS systems
Product Lifecycle
Current product, no discontinuation expected
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent current-handling and thermal performance
Reliable and robust design for harsh environments
Wide operating temperature range
Suitable for high-power, high-voltage applications
RoHS3 compliance for environmentally-friendly use