Manufacturer Part Number
IXFN48N50U3
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with low on-resistance and high power handling capability.
Product Features and Performance
Wide operating temperature range of -40°C to 150°C
High drain-to-source voltage of 500V
Low on-resistance (Rds(on)) of 100mΩ at 500mA, 10V
High continuous drain current of 48A at 25°C
Low input capacitance of 8400pF at 25V
High power dissipation of 520W at case temperature
Product Advantages
Excellent performance for high-power switching applications
Robust design to withstand harsh operating conditions
Efficient power conversion and low energy losses
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±20V
Drain Current (Id): 48A (continuous at 25°C)
On-Resistance (Rds(on)): 100mΩ @ 500mA, 10V
Input Capacitance (Ciss): 8400pF @ 25V
Power Dissipation (Tc): 520W
Quality and Safety Features
Robust SOT-227B package design for high reliability
Compliance with industry safety standards
Rigorous quality control and testing procedures
Compatibility
Suitable for a wide range of high-power switching applications
Can be used as a replacement or upgrade for similar MOSFET devices
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial automation and control
Renewable energy systems
Product Lifecycle
Currently available and actively supported
No known plans for discontinuation
Replacement or upgrade options are available if required
Key Reasons to Choose This Product
Excellent power handling and efficiency for high-power applications
Reliable performance in harsh environments
Easy integration and compatibility with a variety of systems
Robust and safe design for long-term operation
Comprehensive technical support and product lifecycle management
