Manufacturer Part Number
IXFN48N60P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor with high voltage and current capability
Product Features and Performance
600V drain-source voltage rating
40A continuous drain current at 25°C
Low on-resistance of 140mΩ @ 4A, 10V
High power dissipation of 625W at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
Excellent power handling capability
High reliability and ruggedness
Suitable for high-power, high-voltage applications
Efficient power conversion and control
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 140mΩ @ 4A, 10V
Continuous drain current (Id): 40A @ 25°C
Input capacitance (Ciss): 8860pF @ 25V
Power dissipation (Pd): 625W @ 25°C
Quality and Safety Features
RoHS3 compliant
Robust SOT-227B package for high thermal and mechanical reliability
Compatibility
Suitable for a wide range of high-power, high-voltage applications
Application Areas
Power supplies
Motor drives
Industrial controls
Inverters
Welding equipment
Lighting ballasts
Product Lifecycle
Current product, no plans for discontinuation
Replacement and upgrade options available
Several Key Reasons to Choose This Product
Excellent power handling and efficiency
High voltage and current capability
Low on-resistance for reduced power losses
Wide operating temperature range
Robust and reliable packaging
Suitable for a variety of high-power applications
