Manufacturer Part Number
IXFN50N120SK
Manufacturer
IXYS Corporation
Introduction
High-performance silicon carbide (SiCFET) power MOSFET for high-voltage, high-power applications.
Product Features and Performance
Drain-to-source voltage (Vdss) of 1200V
Continuous drain current (Id) of 48A at 25°C
On-state resistance (Rds(on)) as low as 52mΩ
Wide operating temperature range of -40°C to 175°C
Fast switching speed and low gate charge
Robust and reliable SiC technology
Product Advantages
Significant reduction in conduction and switching losses
Enabling high-efficiency, high-density power conversion
Improved thermal management and system reliability
Compatibility with standard MOSFET gate drive circuits
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1200V
Gate-to-Source Voltage (Vgs): +20V/-5V
On-State Resistance (Rds(on)): 52mΩ @ 40A, 20V
Continuous Drain Current (Id): 48A at 25°C
Input Capacitance (Ciss): 1895pF @ 1000V
Gate Charge (Qg): 115nC @ 20V
Quality and Safety Features
RoHS3 compliant
Tested and qualified for reliability and safety
Compatibility
Suitable for high-voltage, high-power applications such as power supplies, motor drives, and renewable energy systems
Application Areas
Industrial power electronics
Renewable energy systems
Electric vehicles and hybrid electric vehicles
High-voltage, high-power switching applications
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Several Key Reasons to Choose This Product
Excellent performance and efficiency due to SiC technology
Robust and reliable design for demanding applications
Wide operating temperature range and compatibility with standard gate drive circuits
Proven track record and support from a reputable manufacturer (IXYS Corporation)
Potential for system-level improvements in power density, thermal management, and overall system reliability
