Manufacturer Part Number
IXFN48N50U2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFETs with low on-resistance and high power handling capability
Product Features and Performance
High drain-source voltage rating of 500V
Low on-resistance of 100mΩ at 500mA and 10V
High continuous drain current of 48A at 25°C
Wide operating temperature range of -40°C to 150°C
Fast switching and low gate charge of 270nC at 10V
Robust device structure with high ruggedness
Product Advantages
Excellent power efficiency due to low on-resistance
High power handling capability
Wide operating temperature range
Reliable and rugged design
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 100mΩ at 500mA, 10V
Continuous Drain Current (Id): 48A at 25°C
Input Capacitance (Ciss): 8400pF at 25V
Power Dissipation (Tc): 520W
Quality and Safety Features
Robust device structure with high ruggedness
Meets automotive and industrial safety standards
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and inverters
Application Areas
Industrial motor drives
Switching power supplies
Inverters and converters
Electric vehicles and hybrid electric vehicles
Product Lifecycle
This product is currently in active production and not nearing discontinuation. Replacement or upgraded models may become available in the future.
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
High power handling and current capability
Wide operating temperature range
Reliable and rugged design
Suitable for a variety of power electronics applications
