Manufacturer Part Number
IXFN44N50U3
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor
Designed for high-power switching applications
Product Features and Performance
Wide operating temperature range of -40°C to 150°C
High drain-to-source voltage of 500V
Low on-resistance of 120mOhm @ 500mA, 10V
High continuous drain current of 44A at 25°C
Low input capacitance of 8400pF @ 25V
High power dissipation of 520W at Tc
Product Advantages
Excellent thermal performance
High reliability and durability
Efficient power switching
Suitable for high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±20V
Drain Current (Id): 44A @ 25°C
On-Resistance (Rds(on)): 120mOhm @ 500mA, 10V
Input Capacitance (Ciss): 8400pF @ 25V
Power Dissipation (Pd): 520W @ Tc
Quality and Safety Features
Robust SOT-227B package
Designed for high-reliability applications
Complies with relevant safety standards
Compatibility
Suitable for a wide range of high-power switching circuits
Can be used in various power electronics applications
Application Areas
High-power switching
Power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
Excellent thermal performance and high power handling capability
Reliable and durable construction
Efficient power switching for high-power applications
Wide operating temperature range
Compatibility with various high-power circuits and systems
