Manufacturer Part Number
IXFN44N100P
Manufacturer
IXYS Corporation
Introduction
High voltage N-Channel MOSFET transistor
Product Features and Performance
1000V drain-source voltage (Vdss)
37A continuous drain current (Id) at 25°C
220mΩ maximum on-resistance (Rds(on)) at 22A, 10V
19000pF maximum input capacitance (Ciss) at 25V
890W maximum power dissipation (Tc)
Operating temperature range of -55°C to 150°C
Product Advantages
High voltage and current capability
Low on-resistance for efficient power switching
Suitable for high-power industrial and automotive applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 220mΩ @ 22A, 10V
Continuous Drain Current (Id): 37A @ 25°C
Input Capacitance (Ciss): 19000pF @ 25V
Power Dissipation (Tc): 890W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications
Compatibility
Compatible with various industrial and automotive power electronics systems
Application Areas
High-power switching circuits
Motor drives
Power supplies
Inverters
Converters
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Suitable for high-temperature and high-power applications
Reliable and RoHS3 compliant
Compatibility with a wide range of power electronics systems
