Manufacturer Part Number
IXFN40N110Q3
Manufacturer
IXYS Corporation
Introduction
This is a high-performance N-channel MOSFET transistor from IXYS Corporation, part of the HiPerFET Q3 series.
Product Features and Performance
1100V drain-to-source voltage rating
35A continuous drain current rating at 25°C
260mΩ maximum on-resistance at 20A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 14,000pF at 25V
Maximum power dissipation of 960W at 25°C
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide temperature range for diverse applications
Compact SOT-227B package for space-saving designs
Key Technical Parameters
Vdss: 1100V
Vgs (max): ±30V
Rds(on) (max): 260mΩ @ 20A, 10V
Id (continuous): 35A @ 25°C
Ciss (max): 14,000pF @ 25V
Power Dissipation (max): 960W @ 25°C
Quality and Safety Features
RoHS3 compliant
Housed in a rugged SOT-227B package
Compatibility
This MOSFET is compatible with a wide range of power electronic circuits and systems.
Application Areas
Switching power supplies
Motor drives
Inverters
High-voltage power conversion
Industrial and automotive electronics
Product Lifecycle
This MOSFET is an active product from IXYS Corporation. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
High voltage and current capabilities
Efficient power switching performance
Wide operating temperature range
Compact and rugged package design
Compatibility with diverse power applications
