Manufacturer Part Number
IXFN38N100Q2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor with excellent power handling capabilities.
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
High drain-source voltage: 1000V
Low on-resistance: 250mΩ @ 19A, 10V
High continuous drain current: 38A
Low input capacitance: 7200pF @ 25V
High power dissipation: 890W
Product Advantages
Excellent power handling and efficiency
Robust design for high-temperature and high-voltage applications
Compact SOT-227B package for ease of integration
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 250mΩ
Continuous Drain Current (Id): 38A
Input Capacitance (Ciss): 7200pF
Power Dissipation (Tc): 890W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
SOT-227B package
Compatible with various power supply and control applications
Application Areas
High-voltage, high-power switching applications
Inverters, converters, and motor drives
Industrial, automotive, and renewable energy systems
Product Lifecycle
Current product offering
No known discontinuation plans
Potential for future upgrades and replacements
Key Reasons to Choose This Product
Excellent power handling and efficiency
Wide operating temperature range
Low on-resistance for minimal power losses
Compact and robust package design
RoHS3 compliance for environmental safety
