Manufacturer Part Number
IXFN36N110P
Manufacturer
IXYS Corporation
Introduction
High-Performance N-Channel MOSFET Transistor
Suitable for Power Conversion and Switching Applications
Product Features and Performance
High Voltage Rating: 1100V Drain-Source Voltage (Vdss)
Low On-Resistance: 240mΩ @ 500mA, 10V
High Continuous Drain Current: 36A @ 25°C (Tc)
Wide Operating Temperature Range: -55°C to 150°C (TJ)
Fast Switching Characteristics
Low Gate Charge: 350nC @ 10V
Product Advantages
Excellent Power Handling Capability
High Efficiency Due to Low On-Resistance
Reliable Operation Across Wide Temperature Range
Suitable for High-Power, High-Voltage Applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 1100V
Gate-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 36A @ 25°C (Tc)
On-Resistance (Rds(on)): 240mΩ @ 500mA, 10V
Input Capacitance (Ciss): 23,000pF @ 25V
Power Dissipation (Pd): 1000W @ Tc
Quality and Safety Features
RoHS3 Compliant
Reliable and Robust SOT-227B Package
Compatibility
Suitable for Power Conversion, Switching, and Control Applications
Compatible with Various Power Electronics Circuits and Systems
Application Areas
Power Supplies
Motor Drives
Inverters
Converters
Industrial Electronics
Renewable Energy Systems
Product Lifecycle
Current Production Part
No Discontinuation Planned
Replacement or Upgrade Options Available
Key Reasons to Choose This Product
High Voltage and Current Handling Capability
Excellent Power Efficiency Due to Low On-Resistance
Wide Operating Temperature Range for Reliable Performance
Fast Switching Characteristics for High-Frequency Applications
Robust and Reliable SOT-227B Package for Industrial Use