Manufacturer Part Number
IXFN34N100
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor with high voltage and current ratings, designed for a wide range of power conversion and control applications.
Product Features and Performance
Extremely low on-resistance (280 mΩ max) for high efficiency
High voltage rating of 1000 V
High continuous drain current of 34 A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching and low gate charge for high-frequency operation
Rugged MOSFET technology for reliability and robustness
Product Advantages
Excellent performance-to-cost ratio
Suitable for high-power, high-efficiency applications
Reliable and robust design for demanding environments
Easy to integrate into power conversion and control systems
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 280 mΩ max
Continuous Drain Current (Id): 34 A at 25°C
Input Capacitance (Ciss): 9200 pF max at 25 V
Power Dissipation (Ptot): 700 W at Tc
Quality and Safety Features
Robust MOSFET design for high reliability
Adherence to industry safety standards
Extensive testing and quality control measures
Compatibility
Suitable for a wide range of power conversion and control applications
Can be used in various power electronics systems, including motor drives, power supplies, and inverters
Application Areas
Power conversion and control
Motor drives
Switching power supplies
Inverters and converters
Industrial and consumer electronics
Product Lifecycle
This product is an active and widely used MOSFET device
Replacements and upgrades are readily available from the manufacturer and other suppliers
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Highly efficient with low on-resistance
Robust and reliable design for demanding applications
Wide operating temperature range and high voltage/current ratings
Suitable for high-frequency, high-power conversion and control applications
