Manufacturer Part Number
IXFN32N120
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
ROHS3 Compliant
SOT-227B Package
HiPerFET Series
N-Channel MOSFET
Drain to Source Voltage (Vdss): 1200 V
On-State Resistance (Rds On): 350 mOhm @ 500 mA, 10 V
Continuous Drain Current (Id): 32 A @ 25°C
Input Capacitance (Ciss): 15900 pF @ 25 V
Gate Threshold Voltage (Vgs(th)): 5 V @ 8 mA
Gate Charge (Qg): 400 nC @ 10 V
Chassis Mount Packaging
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Compact chassis mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 1200 V
On-State Resistance (Rds On): 350 mOhm
Continuous Drain Current (Id): 32 A
Input Capacitance (Ciss): 15900 pF
Gate Threshold Voltage (Vgs(th)): 5 V
Gate Charge (Qg): 400 nC
Quality and Safety Features
ROHS3 Compliant
Compatibility
Compatible with various power conversion and control applications
Application Areas
Power conversion
Motor control
Industrial automation
Renewable energy systems
Product Lifecycle
Currently available, no known discontinuation plans
Key Reasons to Choose This Product
High voltage and current handling
Low on-state resistance for efficient power conversion
Compact chassis mount package
ROHS3 compliance for environmental sustainability
