Manufacturer Part Number
IXFN300N10P
Manufacturer
IXYS Corporation
Introduction
The IXFN300N10P is a high-performance, low on-resistance N-channel MOSFET transistor from IXYS Corporation.
Product Features and Performance
100V drain-source voltage rating
Low on-resistance of 5.5mΩ at 50A, 10V
High continuous drain current of 295A at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 23,000pF at 25V
High power dissipation of 1070W at 25°C
Product Advantages
Excellent efficiency and power handling capabilities
Robust design for high-current, high-temperature applications
Compact SOT-227B package for space-constrained designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.5mΩ @ 50A, 10V
Continuous Drain Current (Id): 295A @ 25°C
Input Capacitance (Ciss): 23,000pF @ 25V
Power Dissipation (Pd): 1070W @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET design for high-stress applications
Compatibility
Compatible with standard MOSFET gate drivers and control circuits
Application Areas
Power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
This product is an active and widely available MOSFET from IXYS Corporation.
No plans for discontinuation or upgrades at this time.
Key Reasons to Choose This Product
Excellent power handling and efficiency for high-current applications
Robust design for demanding operating conditions
Compact package for space-constrained designs
Reliable and RoHS-compliant construction
Widely available and actively supported by the manufacturer
