Manufacturer Part Number
IXFN26N90
Manufacturer
IXYS Corporation
Introduction
The IXFN26N90 is a high-performance N-Channel MOSFET transistor from IXYS Corporation designed for power electronics applications.
Product Features and Performance
900V drain-to-source voltage rating
26A continuous drain current at 25°C
300mOhm maximum on-resistance at 13A, 10V
-55°C to 150°C operating temperature range
10800pF maximum input capacitance at 25V
600W maximum power dissipation at Tc
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Robust design for reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 26A @ 25°C
On-Resistance (Rds(on)): 300mOhm @ 13A, 10V
Input Capacitance (Ciss): 10800pF @ 25V
Power Dissipation (Pd): 600W @ Tc
Quality and Safety Features
RoHS3 compliant
Qualified to industrial standards
Compatibility
Suitable for a variety of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial automation
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from IXYS Corporation.
Key Reasons to Choose This Product
High voltage and current handling capability for demanding power applications
Low on-resistance for efficient power conversion and reduced energy losses
Wide operating temperature range for use in diverse environments
Robust and reliable design for long-term performance
RoHS3 compliance for environmental responsibility
